The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

May. 11, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tse-Yao Huang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/09 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/50 (2023.02);
Abstract

A method for forming a memory device includes: forming an array of memory cells, wherein the memory cells respectively include an access transistor embedded in a semiconductor substrate and a storage capacitor over the semiconductor substrate and coupled to the access transistor; and forming a peripheral circuit around the memory cells, wherein the peripheral circuit includes a first transistor and a second transistor on the semiconductor substrate and each including a protruding channel structure and a gate structure covering the protruding channel structure, the protruding channel structure has a bottom part and an upper part, and the upper part of the protruding channel structure has a top width and a bottom width smaller than the top width.


Find Patent Forward Citations

Loading…