The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Jan. 14, 2022
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yasuyuki Sanda, Tokyo, JP;

Masaki Goto, Tokyo, JP;

Hayato Terada, Tokyo, JP;

Hodaka Rokubuichi, Tokyo, JP;

Haruna Tada, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 7/20 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/367 (2006.01);
U.S. Cl.
CPC ...
H05K 7/209 (2013.01); H01L 21/4878 (2013.01); H01L 21/4882 (2013.01); H01L 21/565 (2013.01); H01L 23/3142 (2013.01); H01L 23/367 (2013.01); H05K 7/20418 (2013.01);
Abstract

A power semiconductor device includes a power module unit and a heat sink. An uneven portion is formed in a module base in the power module unit. The uneven portion includes a depression portion and a buffer depression portion. An uneven portion is formed in a heat sink base unit in the heat sink. The uneven portion and the uneven portion are fitted together by crimping so that the module base of the power module unit and a heat dissipation spreader of the heat sink are integrated. The buffer depression portion is left as a space.


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