The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Nov. 02, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/18 (2006.01); G11C 8/14 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); H01L 23/528 (2006.01); H10B 43/27 (2023.01); G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H10B 43/27 (2023.02);
Abstract
A memory device includes a substrate, a first cell string, second cell string, and third cell string, each connected to a first bit line and formed in a direction perpendicular to a top surface of the substrate, a first upper ground selection line connected to the first cell string, a second upper ground selection line separated from the first upper ground selection line and connected to the second and third cell strings, a first lower ground selection line connected to the first and second cell strings, and a second lower ground selection line separated from the first lower ground selection line and connected to the third cell string.