The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jun. 21, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
John Soo Kim, Hwaseong-si, KR;
Min Wook Chung, Suwon-si, KR;
Kyoung Suk Kim, Seongnam-si, KR;
Soo Kyung Kim, Daegu, KR;
Won Suk Lee, Hwaseong-si, KR;
Jong Jin Lee, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device is provided. The semiconductor device includes: a first interlayer insulating film defining a lower wiring trench; a lower wiring structure including a first lower barrier film which extends along sidewalls of the lower wiring trench, and a lower filling film which is on the first lower barrier film; a second interlayer insulating film on the first interlayer insulating film, the second interlayer insulating film defining an upper wiring trench which exposes at least part of the lower wiring structure; and an upper wiring structure provided in the upper wiring trench and connected to the lower wiring structure. An upper surface of the first lower barrier film is closer to a bottom surface of the lower wiring trench than each of an upper surface of the first interlayer insulating film and an upper surface the lower filling film. The upper surface of the first lower barrier film is concave.