The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Nov. 29, 2021
Mitsubishi Chemical Corporation, Tokyo, JP;
Yuuki Enatsu, Tokyo, JP;
Kenji Iso, Tokyo, JP;
MITSUBISHI CHEMICAL CORPORATION, Tokyo, JP;
Abstract
Provided is a GaN substrate wafer with an improved productivity, which can be preferably used in the production of a nitride semiconductor device having a horizontal device structure. The GaN substrate wafer is a (0001)-oriented GaN substrate wafer that includes a first region arranged on an N-polar side and a second region, which is arranged on a Ga-polar side and has a minimum thickness, via a regrowth interface therebetween. In this GaN substrate wafer, the second region has a minimum thickness of not less than 20 μm, and at least a portion of the second region has a total compensating impurity concentration of 1×10atoms/cmor higher.