The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Apr. 18, 2023
Ionq, Inc., College Park, MD (US);
Jason Madjdi Amini, Takoma Park, MD (US);
Jonathan Albert Mizrahi, Silver Spring, MD (US);
Jeremy Matthew Sage, Acton, MA (US);
James Walker Steere, College Park, MD (US);
IonQ, Inc., College Park, MD (US);
Abstract
Aspects of the present disclosure describe devices trapping devices for use in quantum information processing (QIP) architectures, and more particularly, to the use and fabrication of a multi-layer ion trap on shaped glass or dielectric substrate. A method for fabricating the ion trap is described that includes preparing a back surface of the substrate, building a multi-layer stack on the top surface of the substrate, and completing the back etch to break through the substrate and etching through a metal and dielectric in the multi-layer stack to complete the formation of the ion trap. Shaping of the ion trap may also include trap narrowing features, wings, and/or undercutting. An ion trap fabricated using this approach may be used in a QIP system to trap atomic species provided through a hole in the back of the substrate for use as qubits in quantum operations and computations.