The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Feb. 08, 2024
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Masayuki Akou, Yokohama, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/02 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0246 (2013.01); G06F 2212/7211 (2013.01); G11C 11/5635 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01);
Abstract

A semiconductor storage device according to an embodiment includes a first word line connected to a gate of a first memory cell transistor, a second word line connected to a gate of a second memory cell transistor, a first word line selection transistor capable of supplying a voltage from a voltage supply circuit to the first word line, a second word line selection transistor capable of supplying the voltage from the voltage supply circuit to the second word line, an insulating film provided between the first word line selection transistor and the second word line selection transistor, and a first wiring having at least a part provided on the insulating film and extending in a first direction, in which the voltage supply circuit is capable of supplying a first voltage lower than a ground voltage to the first wiring.


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