The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 11, 2024
Applicant:

Raytheon Company, Tewksbury, MA (US);

Inventors:

Jamal I. Mustafa, Goleta, CA (US);

Justin Gordon Adams Wehner, Goleta, CA (US);

Christopher R. Koontz, Manhattan Beach, CA (US);

Assignee:

RAYTHEON COMPANY, Waltham, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/017 (2006.01);
U.S. Cl.
CPC ...
G02F 1/017 (2013.01); G02F 2203/11 (2013.01); G02F 2203/52 (2013.01);
Abstract

A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.


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