The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 16, 2023
Applicant:

Nichia Corporation, Anan, JP;

Inventors:

Tadashi Kawazoe, Atsugi, JP;

Takuya Kadowaki, Yokohama, JP;

Assignee:

NICHIA CORPORATION, Anan, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/12 (2006.01); H10F 30/221 (2025.01); H10F 39/10 (2025.01); H10F 71/00 (2025.01); H10F 77/1223 (2025.01);
U.S. Cl.
CPC ...
G01J 5/12 (2013.01); H10F 30/221 (2025.01); H10F 39/107 (2025.01); H10F 71/121 (2025.01); H10F 77/1223 (2025.01);
Abstract

A sensor element includes a first silicon semiconductor portion, a second silicon semiconductor portion, a third silicon semiconductor portion, and a p-n junction. The first silicon semiconductor portion includes a first p-type impurity. The second silicon semiconductor portion is arranged on the first silicon semiconductor portion and includes a second p-type impurity. The third silicon semiconductor portion is arranged on the second silicon semiconductor portion and includes an n-type impurity. The p-n junction is defined between the second silicon semiconductor portion and the third silicon semiconductor portion. The sensor element has light-receiving sensitivity to light having a wavelength longer than a wavelength corresponding to a band gap of silicon.


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