The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 30, 2023
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Unist (Ulsan National Institute of Science and Technology), Ulsan, KR;

Inventors:

Taejin Choi, Suwon-si, KR;

Minsu Kim, Ulsan, KR;

Hyeonsuk Shin, Ulsan, KR;

Hyeonjin Shin, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 29/60 (2006.01); H10D 30/62 (2025.01); H10F 39/00 (2025.01);
U.S. Cl.
CPC ...
C30B 29/40 (2013.01); C30B 29/605 (2013.01); H10D 30/6211 (2025.01); H10F 39/805 (2025.01);
Abstract

Disclosed is a nanocrystalline boron nitride film having a relatively low dielectric constant and excellent mechanical properties. The nanocrystalline boron nitride film includes a crystalline boron nitride compound, and has a dielectric constant within a range of 2.5 to 5.5 at a 100 kHz operating frequency.


Find Patent Forward Citations

Choi, Taejin. (2025). Nanocrystalline boron nitride film, image sensor including the same, field effect transistor including the same, and method of fabricating the nanocrystalline boron nitride film (U.S. Patent No. 12473662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12473662

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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