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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12473275 B1

PDFFull Text
Date of Patent:
Nov. 18, 2025

Filed:

Aug. 14, 2020

Arylamine compound and use thereof in photoelectric devices

Applicant:

Zhejiang University, Zhejiang, CN;

Inventors:

Peng Wang, Zhejiang, CN;

Yiming Wang, Zhejiang, CN;

Yuefang Wei, Zhejiang, CN;

Jing Zhang, Zhejiang, CN;

Yi Yuan, Zhejiang, CN;

Ming Lei, Zhejiang, CN;

Assignee:

Zhejiang University, Hangzhou, CN;

Attorney:
Primary Examiner:

Shawquia Jackson

Int. Cl.
CPC ...
C07D 209/88 (2006.01); C07D 405/14 (2006.01); C07D 409/14 (2006.01); C07D 491/147 (2006.01); C07D 493/06 (2006.01); C07D 495/04 (2006.01); C07D 519/00 (2006.01); C09K 11/06 (2006.01); H10K 85/50 (2023.01); H10K 85/60 (2023.01); H01G 9/20 (2006.01); H10K 30/50 (2023.01);
U.S. Cl.
CPC ...
C07D 409/14 (2013.01); C07D 209/88 (2013.01); C07D 405/14 (2013.01); C07D 491/147 (2013.01); C07D 493/06 (2013.01); C07D 495/04 (2013.01); C07D 519/00 (2013.01); C09K 11/06 (2013.01); H10K 85/50 (2023.02); H10K 85/633 (2023.02); H10K 85/636 (2023.02); C09K 2211/1018 (2013.01); H01G 9/20 (2013.01); H10K 30/50 (2023.02); H10K 85/623 (2023.02); H10K 85/624 (2023.02); H10K 85/657 (2023.02); H10K 85/6572 (2023.02); H10K 85/6574 (2023.02); H10K 85/6576 (2023.02);
Abstract

The present application relates to technical field of organic semiconductors and provides an arylamine compound and use thereof in photoelectric devices. The compound is composed of a N,N-dialkyl-dicarbazole amine functional group modified unit with larger conjugated system. The semiconductor material provided by the present application has high glass transition temperature, high solubility, good film forming property and high thermal stability of film morphology, and can be used as a hole transport material in photoelectric devices to realize excellent thermal stability. The compound has simple preparation process, easily available raw materials and low price, and is suitable for industrial production. High glass transition temperature and good thermal stability are beneficial to prolong the working life of optoelectronic devices. High solubility, can form amorphous film with excellent quality, and is beneficial to application in photoelectric devices; The device has high photoelectric conversion efficiency and is a hole transport material with excellent performance.

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