The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Dec. 18, 2019
Applicants:

National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Atsushi Tanaka, Nagoya, JP;

Chiaki Sasaoka, Nagoya, JP;

Hiroshi Amano, Nagoya, JP;

Daisuke Kawaguchi, Hamamatsu, JP;

Yotaro Wani, Hamamatsu, JP;

Yasunori Igasaki, Hamamatsu, JP;

Toshiki Yui, Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); B28D 5/00 (2006.01); H01L 21/304 (2006.01); H01L 21/67 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B28D 5/0011 (2013.01); H01L 21/304 (2013.01); H01L 21/67115 (2013.01); H01L 21/78 (2013.01);
Abstract

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.


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