The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jan. 25, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Karthik Yogendra, Hillsboro, OR (US);

Heng Wu, Guilderland, NY (US);

Saba Zare, White Plains, NY (US);

Dimitri Houssameddine, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02); G11C 11/1675 (2013.01);
Abstract

A semiconductor device including a magnetic tunnel junction (MTJ) stack, a first metal line above the MTJ stack and a magnetoelectric material layer above the first metal line. A semiconductor device including an array of magnetic tunnel junction (MTJ) stacks, a first metal line connected physically and electrically to a top electrode of each MTJ stack in a row of the array of MTJ stacks and a magnetoelectric material layer above the first metal line, connected physically and electrically to the first metal line. A method including forming an array of magnetic tunnel junction (MTJ) stacks, forming a first metal line above a row of the array of MTJ stacks, and forming a magnetoelectric material layer above the first metal line, connected physically and electrically to the first metal line.


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