The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Aug. 30, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Youngdae Kim, Yongin-si, KR;

Sangjin Park, Yongin-si, KR;

Chadong Kim, Yongin-si, KR;

Donghyun Yang, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/124 (2023.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10K 59/124 (2023.02); H10D 86/451 (2025.01); H10D 86/60 (2025.01); H10K 59/1213 (2023.02);
Abstract

A display apparatus includes a substrate, a thin film transistor, a first inorganic insulating layer, a first organic insulating layer, a second inorganic insulating layer, and a second organic insulating layer. The thin film transistor is over the substrate and includes a semiconductor layer and a gate electrode. The first inorganic insulating layer includes a first insulating layer between the semiconductor layer and the gate electrode of the thin film transistor and a second insulating layer over the gate electrode. The first organic insulating layer is over the first inorganic insulating layer. The second inorganic insulating layer is over the first organic insulating layer. The second organic insulating layer is over the second inorganic insulating layer. At least one hole passing through the first inorganic insulating layer and the second inorganic insulating layer is formed in a peripheral portion of the thin film transistor.


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