The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Aug. 31, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

In-Bae Kim, Daejeon, KR;

Jaechung Kim, Goyang-si, KR;

Seungchan Lee, Hwaseong-si, KR;

Jaeik Lim, Hwaseong-si, KR;

Wonwoo Choi, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H10K 50/844 (2023.01); H10K 59/122 (2023.01); H10K 59/123 (2023.01); H10K 59/40 (2023.01);
U.S. Cl.
CPC ...
H10K 59/123 (2023.02); H10K 50/844 (2023.02); H10K 59/122 (2023.02); H10K 59/40 (2023.02);
Abstract

A display device includes a base layer, a circuit layer including a reinforcing layer disposed on the base layer and transistors disposed on the reinforced layer, where each of the transistors includes a semiconductor pattern including a source, an active, a drain, and a gate, and a display layer including a light-emitting diode connected to the transistors, where the reinforcing layer overlaps three or more actives among actives of the transistors. Some of semiconductor patterns of the transistors include polysilicon, others of the semiconductor patterns of the transistors include oxide, and a distance from the reinforcing layer to a semiconductor pattern including the polysilicon is shorter than a distance from the reinforcing layer to a semiconductor pattern including the oxide.


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