The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Nov. 24, 2021
Plessey Semiconductors Ltd, Plymouth, GB;
Plessey Semiconductors Ltd, Plymouth, GB;
Abstract
A light emitting diode structure comprising: a p-type region; an n-type region; a gate contact; a first light emitting region for recombination of carriers injectable by the p-type region and the n-type region; and a second light emitting region for recombination of carriers injectable by the p-type region and the n-type region, wherein the first light emitting region and the second light emitting region at least partially overlap to form a light emitting surface associated with the first light emitting region and the second light emitting region; wherein the p-type region is at least partially formed in a first channel through the first light emitting region and the second light emitting region, and the n-type region is at least partially formed in a second channel through the first light emitting region and the second light emitting region, wherein the light emitting device is configured such that the wavelength of light emitted by the light emitting surface is controllable by varying a gate voltage applied to one of the p-type and n-type regions by the gate contact thereby to alter carrier injection by the p-type and n-type regions into the first and second light emitting regions.