The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Sep. 10, 2020
Seoul Viosys Co., Ltd., Ansan-si, KR;
Seoul Viosys Co., Ltd., Ansan-si, KR;
Abstract
A light emitting diode chip including a light emitting structure and a distributed Bragg reflector (DBR) having first, second, and third regions and including first material layers having a low index of refraction and second material layers having a high index of refraction, in which the first material layers include a first group having an optical thickness greater than 0.25λ+10%, a second group having an optical thickness in a range of 0.25λ−10% to 0.25λ+10%, and a third group having an optical thickness less than 0.25λ−10%, the first region has alternately disposed first and second groups, the second region has the third group, the first material layers in the third region have a first material layer having an optical thickness less than 0.25λ and greater than 0.25λ, the second material layers have a smaller average optical thickness than the first group of the first material layers.