The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Feb. 24, 2022
Applicant:
Omnivision Technologies, Inc., Santa Clara, CA (US);
Assignee:
OmniVision Technologies, Inc., Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/802 (2025.01); H10F 39/18 (2025.01); H10F 39/182 (2025.01); H10F 39/199 (2025.01); H10F 39/8023 (2025.01); H10F 39/8027 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01); H10F 39/809 (2025.01); H10F 39/811 (2025.01); H10F 39/804 (2025.01); H10F 39/813 (2025.01);
Abstract
Image sensors include a pixel array arranged about an array center, each pixel of the pixel array having a photodiode formed in a semiconductor substrate, and a central deep trench isolation structure disposed in the semiconductor substrate relative to a pixel center between the photodiode and an illuminated surface of the semiconductor substrate. If the pixel center is not coincident with the array center, then the central deep trench isolation structure is disposed at a CDTI shift distance away from the pixel center.