The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Mar. 05, 2024
Applicants:

Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;

Jinko Solar Co., Ltd., Jiangxi, CN;

Inventors:

Huimin Li, Zhejiang, CN;

Menglei Xu, Zhejiang, CN;

Jie Yang, Zhejiang, CN;

Xinyu Zhang, Zhejiang, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 10/14 (2025.01); H10F 19/80 (2025.01); H10F 19/90 (2025.01); H10F 77/20 (2025.01); H10F 77/30 (2025.01); H10F 77/70 (2025.01);
U.S. Cl.
CPC ...
H10F 10/146 (2025.01); H10F 19/80 (2025.01); H10F 19/90 (2025.01); H10F 77/215 (2025.01); H10F 77/227 (2025.01); H10F 77/311 (2025.01); H10F 77/703 (2025.01);
Abstract

Provided are a solar cell, a method for preparing a solar cell, and a photovoltaic module, relating to the field of photovoltaics. The solar cell includes a substrate, a dielectric layer and a doped semiconductor layer which are stacked, a passivation layer, and electrodes. The substrate has a first surface. The first surface includes an edge region and a center region. The edge region surrounds the center region. The edge region is substantially flush with or closer to the second surface than the center region. The dielectric layer is formed over the center region. The passivation layer covers the edge region and a surface of the doped semiconductor layer facing away the dielectric layer. The electrodes are located in the center region, and penetrate the passivation layer in a thickness direction to be in electrical contact with the doped semiconductor layer.


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