The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Mar. 04, 2020
Applicant:

Board of Regents, the University of Texas System, Austin, TX (US);

Inventors:

Alexander A. Demkov, Austin, TX (US);

John Elliott Ortmann, Jr., Austin, TX (US);

Agham Posadas, Round Rock, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 86/00 (2025.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H10D 86/201 (2025.01); H01L 21/76248 (2013.01);
Abstract

Some embodiments of the present technology simplify the process of producing SOI wafers significantly compared to traditional methods. Furthermore, various embodiments provide a route for the integration of perovskite transition metal oxide thin films with different properties into SOI wafers. As such films display a wide array of novel electronic, magnetic, and optical phenomena, their integration into technologically-relevant SOI wafers will likely allow for the construction of a wide array of novel devices.


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