The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Aug. 25, 2022
Infineon Technologies Austria Ag, Villach, AT;
Hyeongnam Kim, Chandler, AZ (US);
Mohamed Imam, Chandler, AZ (US);
Eric G. Persson, Minnetonka, MN (US);
Alain Charles, Redondo Beach, CA (US);
Infineon Technologies Austria AG, Villach, AT;
Abstract
A Group III nitride transistor cell is provided that includes a Group III nitride-based body, a source finger, a gate finger, and a drain finger extending substantially parallel to one another and positioned on the Group III nitride-based body, the gate finger being arranged laterally between the source finger and the drain finger and including a p-type Group III nitride finger arranged on the Group III nitride body and a gate metal finger arranged on the p-type Group III nitride finger, and a protection diode. The protection diode is integrated into the Group III nitride transistor cell and operable to conduct current in a reverse direction when the Group III nitride transistor cell is switched off. The protection diode is electrically coupled between the source and drain fingers and is positioned on the Group III nitride body laterally between and spaced apart from the gate finger and the drain finger.