The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Sep. 21, 2022
Denso Corporation, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Mirise Technologies Corporation, Nisshin, JP;
Jun Saito, Nisshin, JP;
DENSO CORPORATION, Kariya, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
MIRISE Technologies Corporation, Nisshin, JP;
Abstract
A silicon carbide semiconductor device includes a semiconductor element having a first-conductivity-type region, a gate-trench structure, an interlayer insulation film, a first electrode, and a recess. The gate-trench structure has a gate trench. The first electrode includes a metal layer, a barrier metal, an electrode layer, and a protrusion. The protrusion has a first protruding portion and a second protruding portion disposed respectively at both sides of the gate trench. The electrode layer has a portion embedded in the recess. A distance between a tip of the first protruding portion and a tip of the second protruding portion in a width direction of the gate-trench is smaller than a width of the portion of the electrode layer below the protrusion.