The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Dec. 30, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seung Min Song, Suwon-si, KR;
Nam Hyun Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate extending a first direction and a second direction perpendicular to the first direction, an active pattern that protrudes from the substrate in a third direction perpendicular to the first direction and the second direction, a first plurality of lower nanosheets, a second plurality of lower nanosheets stacked spaced apart from the first plurality of lower nanosheets in the first direction, a first plurality of upper nanosheets spaced apart from the first plurality of lower nanosheets in the third direction, and a second plurality of upper nanosheets spaced apart from the second plurality of lower nanosheets in the third direction. A first upper gate electrode surrounding the first plurality of upper nanosheets. A second upper gate electrode surrounding the second plurality of upper nanosheets. A width of the first plurality of upper nanosheets is different from a width of the second plurality of upper nanosheets.