The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Dec. 21, 2022
Huawei Technologies Co., Ltd., Guangdong, CN;
Wen Yin, Shenzhen, CN;
Huawei Technologies Co., Ltd., Shenzhen, CN;
Abstract
A field effect transistor and a preparation method thereof, and a semiconductor structure are provided. An example field effect transistor includes: a substrate structure, a source, a drain, and a gate. The source and the drain are arranged on the substrate structure in a first direction, and a channel region is formed between the source and the drain. A channel layer is formed in the channel region, and N carbon nanotubes extending in the first direction are embedded in the channel layer, where N is an integer greater than or equal to 1. Two ends of each of the N carbon nanotubes are respectively connected to the source and the drain to form a conductive path. The gate is formed on the channel layer. In the channel region between the source and the drain, electron conduction is implemented by using the carbon nanotube disposed in the channel layer.