The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Aug. 07, 2023
Mitsubishi Electric Corporation, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type; an active region in which a main current flows in a thickness direction of the semiconductor substrate; a terminal region of a second conductivity type formed in a surface layer of the drift layer and surrounding the active region; a covering material covering the terminal region; and a peripheral well region of a first conductivity type formed in the surface layer of the drift layer on an outer side of the terminal region and having an impurity concentration higher than that of the drift layer, wherein a peripheral end of the covering material is arranged on an inner side of a peripheral end of the semiconductor substrate, and the peripheral well region is at least partially formed under the covering material and not formed under a peripheral end of the covering material.