The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
May. 12, 2023
Applicant:
Db Hitek Co., Ltd., Bucheon-si, KR;
Inventor:
Nam Kyu Kim, Yongin-si, KR;
Assignee:
DB HiTek Co., Ltd., Bucheon-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/60 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/603 (2025.01); H10D 30/024 (2025.01); H10D 30/0281 (2025.01); H10D 30/673 (2025.01); H10D 62/154 (2025.01); H10D 62/158 (2025.01); H10D 62/393 (2025.01); H10D 64/111 (2025.01);
Abstract
Disclosed are a high voltage semiconductor device and a method of manufacturing the same and, more particularly, a high voltage semiconductor device and a method of manufacturing the same seeking to shorten a path of excess carriers to a body contact and improve breakdown voltage (BV) characteristics accordingly, in addition to minimizing a separation distance between adjacent gate electrodes and improving specific on-resistance (Rsp) characteristics accordingly, by including a plurality of spaced apart body contacts in a body region and offset from each other along a horizontal direction in the semiconductor device.