The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jun. 23, 2022
Renesas Electronics Corporation, Tokyo, JP;
Tadashi Yamaguchi, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A performance of a memory cell including a ferroelectric film is improved. Reliability of the memory cell is ensured. A semiconductor device having a memory cell includes: a plurality of semiconductor layers configuring a channel region; a pair of semiconductor layers SIprovided so as to sandwich the plurality of semiconductor layers SIin an X direction, connected to the plurality of semiconductor layers SI, and configuring a source region and a drain region; a plurality of paraelectric films IL covering outer peripheries of the plurality of semiconductor layers SI, respectively; a bottom electrode BE covering outer peripheries of the plurality of paraelectric films IL between the pair of semiconductor layers SI; a ferroelectric film FE formed on the bottom electrode BE; and a top electrode TE formed on the ferroelectric film FE.