The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Jun. 20, 2022
Kioxia Corporation, Tokyo, JP;
Yuta Kamiya, Nagoya Aichi, JP;
Kenichiro Toratani, Yokkaichi Mie, JP;
Kazuhiro Matsuo, Kuwana Mie, JP;
Shoji Honda, Kuwana Mie, JP;
Takuya Hirohashi, Ebina Kanagawa, JP;
Borong Chen, Kawasaki Kanagawa, JP;
Kota Takahashi, Yokkaichi Mie, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes forming a first film including oxygen, forming a second film including nitrogen, etching surfaces of the first film and the second film using a substance including a halogen, and forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, with each of the first processes forming a portion of the third film, and each of the second processes etching a portion of the third film using a substance including a halogen.