The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

May. 27, 2022
Applicant:

Psemi Corporation, San Diego, CA (US);

Inventors:

Parvez Daruwalla, San Diego, CA (US);

Rong Jiang, San Diego, CA (US);

Khushali Shah, San Diego, CA (US);

Assignee:

PSEMI CORPORATION, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03F 3/195 (2006.01); H03F 3/72 (2006.01);
U.S. Cl.
CPC ...
H03F 1/223 (2013.01); H03F 3/195 (2013.01); H03F 3/72 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01); H03F 2203/7212 (2013.01);
Abstract

Feedback methods and devices to reduce gain in RF amplifiers, more in particular LNAs, are disclosed. The described methods are based on providing feedback paths from the drain terminal of one of the LNA cascode transistors to the source terminal of the LNA input transistor, or from the gate terminal of the input transistor to the source terminal of the LNA input transistor. The disclosed methods can be combined with one another or with existing feedback methods to provide further flexibility and improved tradeoffs when designing LNAs for applications having different requirements.


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