The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Dec. 07, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Prasad Bhosale, Albany, NY (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Michael Rizzolo, Delmar, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01); H01L 23/5283 (2013.01);
Abstract

Semiconductor devices including a super via connection between levels are provided. The semiconductor device can include a first interlevel dielectric layer, a back-end-of-line (BEOL) interconnect structure disposed in the first interlevel dielectric layer, a second interlevel dielectric layer disposed on a first portion of the first interlevel dielectric layer, a third interlevel dielectric layer disposed on the second interlevel dielectric layer, and a super via disposed on a second portion of the first interlevel dielectric layer, wherein a first end of the super via is connected to the BEOL interconnect structures and wherein a second end of the super via opposite the first end of the super via is a distance from the first interlevel dielectric layer larger than a height distance of the second interlevel dielectric layer.


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