The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Sep. 17, 2021
Applicant:
Hitachi, Ltd., Tokyo, JP;
Inventors:
Ti Chen, Tokyo, JP;
Takeshi Tokuyama, Tokyo, JP;
Akihiro Namba, Tokyo, JP;
Takahiro Araki, Tokyo, JP;
Masanori Sawahata, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/473 (2006.01); H01L 23/31 (2006.01); H01L 25/16 (2023.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/473 (2013.01); H01L 23/3121 (2013.01); H01L 25/16 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract
A power semiconductor device according to the present invention is provided with a conductive section, a circuit component, a substrate that supports the conductive section and the circuit component, and a sealing member, wherein the sealing member forms a first flow path, and the first flow path has a first region thermally connected to a power circuit and a second region thermally connected to the circuit component.