The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Dec. 01, 2021
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Kaustav Banerjee, Goleta, CA (US);

Junkai Jiang, Sunnyvale, CA (US);

Kunjesh Agashiwala, Santa Barbara, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/76802 (2013.01); H01L 21/76871 (2013.01);
Abstract

An MLG (multilayer graphene) device layer structure is connected with a via. The structure includes an M1 MLG interconnect device layer upon a dielectric layer. Interlayer dielectric isolates the M1 MLG interconnect device layer. An M2 MLG interconnect device layer is upon the interlayer dielectric. A metal via penetrates through the M2 MLG interconnect device layer, the interlayer dielectric and the M1 MLG interconnect device layer and makes edge contact throughout the thickness of both M1 MLG and M2 MLG layers. A method diffuses carbon from a solid phase graphene precursor through a catalyst layer to deposit MLG on a dielectric or metal layer via application of mechanical pressure at a diffusion temperature to form MLG layers.


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