The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Oct. 24, 2023
Applicant:
Kokusai Electric Corporation, Tokyo, JP;
Inventor:
Arito Ogawa, Toyama, JP;
Assignee:
Kokusai Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2025.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); C23C 16/34 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/4583 (2013.01); C23C 16/52 (2013.01); H10D 64/667 (2025.01);
Abstract
Described herein is a technique capable of suppressing the generation of particles due to a film peeling in a process chamber. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) loading a substrate with an oxide film formed thereon into a process chamber wherein a metal-containing film is formed on a wall or other location in the process chamber; (b) supplying into the process chamber with at least one among: a gas containing a group 14 element and hydrogen; and a gas containing oxygen; and (c) forming the metal-containing film on the substrate after (b).