The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Sep. 23, 2022
Applicant:
Hangzhou Silicon-magic Semiconductor Technology Co., Ltd., Hangzhou, CN;
Inventor:
He Sun, Hangzhou, CN;
Assignee:
Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/265 (2006.01); H10D 30/66 (2025.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H10D 30/668 (2025.01);
Abstract
The present disclosure relates to a method for manufacturing a trench-gate MOSFET. In the method, a first trench is formed in a first region and a second trench is formed in a second region in an epitaxial layer. A first well is formed in a bottom surface of the first trench in the first region, and a body region is formed in the epitaxial layer in the second region, simultaneously in one ion implantation process with one mask being used. Thus, the method reduces a number of masks and simplifies ion implantation processes, thereby reducing manufacturing cost.