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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12469705 B1

PDFFull Text
Date of Patent:
Nov. 11, 2025

Filed:

Apr. 14, 2023

Vertical trench device configurations for radiation-environment applications

Applicant:

Scdevice Llc, Portland, OR (US);

Inventors:

Sudarsan Uppili, Portland, OR (US);

David Lee Snyder, Beaverton, OR (US);

Scott Joseph Alberhasky, Hillsboro, OR (US);

Assignee:

SCDevice LLC, Portland, OR (US);

Attorney:

Daylight Law, P.C.

Primary Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/285 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 30/01 (2025.01); H10D 30/87 (2025.01); H10D 62/83 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/28537 (2013.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 30/061 (2025.01); H10D 30/871 (2025.01); H10D 62/83 (2025.01); H10D 62/8325 (2025.01);
Abstract

Semiconductor devices and associated fabrication methods are disclosed. In one disclosed approach a process for forming a semiconductor device is provided. The process includes: implanting a first region of semiconductor material using a first channeled implant with a first conductivity type; and implanting, after the first channeled implant, a second region of semiconductor material using a second channeled implant with a second conductivity type. The first channeled implant disrupts a crystal structure of the first region of semiconductor material and does not disrupt a crystal structure of the second region of semiconductor material.

Find Patent Forward Citations

Uppili, Sudarsan. (2025). Vertical trench device configurations for radiation-environment applications (U.S. Patent No. 12469705). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12469705

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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