The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jan. 31, 2024
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Nam Cheol Jeon, Icheon-si, KR;

Chang Beom Woo, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/0433 (2013.01); G11C 16/24 (2013.01);
Abstract

An embodiment of the present disclosure relates to a memory device configured to: apply an erase voltage and a first pass voltage at a first time, apply a turn-on voltage at a second time before a level of the erase voltage increases to a target level, maintain the erase voltage, the first pass voltage, and the turn-on voltage at a third time when the level of the erase voltage equals the target level, and reduce a voltage difference between a memory cell and a word line at a fourth time after the third time.


Find Patent Forward Citations

Jeon, Nam. (2025). Memory device and operating method of the memory device (U.S. Patent No. 12469564). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12469564

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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