The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Apr. 06, 2023
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Chang Hyun Han, Gyeonggi-do, KR;
Moon Soo Sung, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0433 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01);
Abstract
A semiconductor device may include: a cell array including memory cells connected to local word lines; pass transistors that connect global word lines and the local word lines in response to a block selection signal; an operation voltage supplying circuit that applies a read voltage or a pass voltage to the global word lines; and a well bias supplying circuit that, during a read operation, applies a well bias having a negative level to a well region of the pass transistor connected to a selected local word line, in a discharge period in which an unselected local word line is discharged.