The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
May. 25, 2023
Huawei Technologies Co., Ltd., Guangdong, CN;
Huawei Technologies Co., Ltd., Shenzhen, CN;
Abstract
An example memory includes a plurality of storage units and bit lines distributed in an array in a storage area of the memory, where each of the storage unit includes a transistor and a magnetic tunnel junction (MTJ) element connected to the transistor. The MTJ element is disposed on a current transmission path between a source or a drain of the transistor and the bit line. The MTJ element includes a pinning layer, a reference layer, a tunneling layer, and a free layer that are stacked in sequence, and a magnetization direction of the pinning layer is parallel to a stacking direction of layers in the MTJ. The example memory further includes a first magnetic structure disposed on the current transmission path and in contact with the MTJ element. An included angle between a magnetization direction of the first magnetic structure and the magnetization direction of the pinning layer is (90°, 180°].