The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Sep. 27, 2021
Applicant:
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Inventors:
Assignee:
DOWA Electronics Materials Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/42 (2006.01); H01L 21/02 (2006.01); H10D 62/854 (2025.01);
U.S. Cl.
CPC ...
C30B 29/42 (2013.01); H01L 21/02002 (2013.01); H10D 62/854 (2025.01);
Abstract
Provided is a GaAs wafer that can suitably be used to produce LiDAR sensors in particular and a method of producing a GaAs ingot that can be used to obtain such a GaAs wafer. The GaAs wafer has a silicon concentration of 5.0×10cmor more and less than 3.5×10cm, an indium concentration of 3.0×10cmor more and less than 3.0×10cm, and a boron concentration of 1.0×10cmor more. The average dislocation density of the GaAs wafer is 1500/cmor less.