The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jul. 20, 2020
Applicant:

Posco, Pohang-si, KR;

Inventors:

Young-Roc Im, Gwangyang-si, KR;

Man-Young Park, Gwangyang-si, KR;

Jong-Chan Park, Gwangyang-si, KR;

Eul-Yong Choi, Gwangyang-si, KR;

Min-Seo Koo, Gwangyang-si, KR;

Jong-Kweon Kim, Gwangyang-si, KR;

Jae-Hoon Lee, Gwangyang-si, KR;

Assignee:

POSCO CO., LTD, Pohang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C21D 9/46 (2006.01); B32B 15/01 (2006.01); C21D 6/00 (2006.01); C21D 8/00 (2006.01); C21D 8/02 (2006.01); C22C 38/00 (2006.01); C22C 38/02 (2006.01); C22C 38/06 (2006.01); C22C 38/42 (2006.01); C22C 38/44 (2006.01); C22C 38/46 (2006.01); C22C 38/48 (2006.01); C22C 38/50 (2006.01); C22C 38/54 (2006.01); C22C 38/58 (2006.01);
U.S. Cl.
CPC ...
C21D 9/46 (2013.01); B32B 15/013 (2013.01); C21D 6/004 (2013.01); C21D 6/005 (2013.01); C21D 6/008 (2013.01); C21D 8/005 (2013.01); C21D 8/0226 (2013.01); C21D 8/0236 (2013.01); C22C 38/001 (2013.01); C22C 38/002 (2013.01); C22C 38/02 (2013.01); C22C 38/06 (2013.01); C22C 38/42 (2013.01); C22C 38/44 (2013.01); C22C 38/46 (2013.01); C22C 38/48 (2013.01); C22C 38/50 (2013.01); C22C 38/54 (2013.01); C22C 38/58 (2013.01); C21D 2211/001 (2013.01); C21D 2211/008 (2013.01);
Abstract

Provided are a high-strength steel sheet and a method for manufacturing same, the high-strength steel sheet including: an alloy system having C, Si, Mn, Cr, Al, Nb, Ti, B, P, S, N, and the remainder of Fe and other inevitable impurities. The contents of C, Si, and Al satisfy equation (1) below. The microstructure includes, by an area fraction, greater than 50% to 70% or less of tempered martensite, and the remainder of residual austenite, fresh martensite, ferrite, and bainite, in which a cementite phase as a second phase is precipitated and distributed in an area fraction of 1-3% between bainite laths, or at a lath on the tempered martensite or grain boundaries. [Equation (1)][C]+([Si]+[Al])/5; 0.35 wt. % (wherein [C], [Si], and [Al] denote wt % of C, Si, and Al, respectively.)


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