The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Apr. 28, 2020
Applicant:
Rensselaer Polytechnic Institute, Troy, NY (US);
Inventor:
Michael Shur, Vienna, VA (US);
Assignee:
Rensselaer Polytechnic Institute, Troy, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/282 (2025.01); H10F 77/122 (2025.01); H10F 77/124 (2025.01); H10F 77/40 (2025.01);
U.S. Cl.
CPC ...
H10F 30/282 (2025.01); H10F 77/122 (2025.01); H10F 77/1246 (2025.01); H10F 77/1248 (2025.01); H10F 77/413 (2025.01);
Abstract
One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency.