The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Dec. 15, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Su Chen Fan, Cohoes, NY (US);
Christopher J. Waskiewicz, Rexford, NY (US);
Yann Mignot, Slingerlands, NY (US);
Jeffrey C. Shearer, Albany, NY (US);
Hemanth Jagannathan, Niskayuna, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/151 (2025.01); H10D 84/013 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01);
Abstract
A semiconductor device comprises a substrate including at least one vertical fin extending from the substrate, a bottom source/drain region beneath the at least one vertical fin, a top source/drain region disposed above the at least one vertical fin, a metal gate structure, a contact coupled to the top source/drain region and first and second contact spacers disposed on each side of the contact.