The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Feb. 24, 2021
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventor:

Huilong Zhu, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/80 (2025.01); H10D 1/00 (2025.01); H10D 1/66 (2025.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H10D 1/047 (2025.01); H10D 1/66 (2025.01); H10D 30/025 (2025.01); H10D 30/63 (2025.01);
Abstract

A semiconductor apparatus including a capacitor and a method of manufacturing the same, and an electronic device including the semiconductor apparatus are provided. According to embodiments, the semiconductor apparatus may include: a vertical semiconductor device including an active region extending vertically on a substrate; and a capacitor including a first capacitor electrode, a capacitor dielectric layer and a second capacitor electrode sequentially stacked. The first capacitor electrode extends vertically on the substrate and includes a conductive material, and the conductive material includes at least one semiconductor element contained in the active region of the vertical semiconductor device.


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