The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Jul. 13, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Shinya Sasagawa, Chigasaki, JP;
Ryota Hodo, Atsugi, JP;
Takashi Hirose, Yokohama, JP;
Yoshihiro Komatsu, Ebina, JP;
Katsuaki Tochibayashi, Isehara, JP;
Kentaro Sugaya, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.