The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Nov. 06, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Kohei Ebihara, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
In a semiconductor device, a semiconductor substrate is divided into an inner region in which an active region is provided and an outer region surrounding the inner region. The semiconductor device includes a semiconductor layer of a first conductivity type, a termination well region of a second conductivity type selectively provided in an upper layer portion of the semiconductor layer to surround the inner region, an impurity region selectively provided in an upper layer portion of the termination well region, a front surface electrode, a back surface electrode, an insulation film being provided to partially cover a top of the termination well region, an outer peripheral wire layer surrounding the inner region, at least a part of which is provided on the insulation film, and an interlayer insulation film at least covering the insulation film and the outer peripheral wire layer.