The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Sep. 30, 2019
Guangdong Zhineng Technologies, Co. Ltd., Guangdong, CN;
Zilan Li, Guangdong, CN;
GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD., Guangdong, CN;
Abstract
The present disclosure relates to a HEMT, which comprises a vertical interface; a channel layer disposed outside of the vertical interface; a channel supply layer disposed outside of the channel layer, wherein a vertical 2 DEG is formed in the channel layer adjacent to an interface between the channel layer and the channel supply layer; a first electrode configured to be electrically connected to the vertical 2 DEG; a second electrode configured to be electrically connected to the vertical 2 DEG; a gate electrode disposed outside of the channel supply layer. The present disclosure also relates to a method of manufacturing a HEMT, which comprises forming a vertical interface; forming a channel layer outside of the vertical interface; forming a channel supply layer outside the channel layer, wherein a vertical 2 DEG is formed in the channel layer adjacent to an interface between the channel layer and the channel supply layer; and forming a first electrode and a second electrode which are electrically connected to the 2 DEG, and a gate electrode which form schottky contact to the 2 DEG.