The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Dec. 01, 2022
Applicant:
Ipower Semiconductor, Gilroy, CA (US);
Inventor:
Hamza Yilmaz, Gilroy, CA (US);
Assignee:
IPOWER SEMICONDUCTOR, Gilroy, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/60 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 8/60 (2025.01); H10D 64/513 (2025.01);
Abstract
A shield trench power device such as a trench MOSFET or IGBT includes a substrate or an epitaxial layer of silicon, silicon carbide, gallium nitride, or gallium arsenide and employs an in-trench structure including a gate structure and an underlying polysilicon or oxide shield region that contacts a shield region in an epitaxial or crystalline layer of the device. The poly silicon region may be laterally confined by spacers in a gate trench and may contact or be isolated from the underlying shield region. Alternatively, the polysilicon region may be replaced with an insulating region.