The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Dec. 19, 2022
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Manoj Mehrotra, Plano, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 8/01 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 8/605 (2025.01); H10D 8/051 (2025.01); H10D 64/01 (2025.01); H10D 64/23 (2025.01); H10D 64/64 (2025.01);
Abstract
A method includes forming first and second trenches in a semiconductor substrate. The method further includes filling the first and second trenches with polysilicon. The polysilicon is oppositely doped from the semiconductor substrate. A Schottky contact is formed on the semiconductor substrate between the first and second trenches. The method also includes forming an anode for the Schottky contact. The anode is coupled to the polysilicon in the first and second trenches.