The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Dec. 23, 2022
Applicant:

Scdevice Llc, Portland, OR (US);

Inventors:

Sudarsan Uppili, Portland, OR (US);

Scott Joseph Alberhasky, Hillsboro, OR (US);

David Lee Snyder, Beaverton, OR (US);

Assignee:

SCDevice LLC, Portland, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 62/10 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 62/126 (2025.01); H10D 64/62 (2025.01); H10D 64/64 (2025.01);
Abstract

Vertical diodes are disclosed herein for radiation-environment applications. The diodes can be junction barrier Schottky (JBS) diodes. A disclosed vertical diode includes a first region with a first conductivity type, fingers with a second conductivity type and located in a top portion of the first region, at least one tap region with the first conductivity type formed in the fingers, and a metal layer located over and in contact with the first region and the fingers and forming a Schottky barrier with the first region. Another disclosed vertical diode includes a first region with a first conductivity type, fingers with a second conductivity type located in a top portion of the first region and having a well doping concentration, and a metal layer located over the first region and the fingers and forming a Schottky barrier with the first region.


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