The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
May. 31, 2022
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Yanbiao Pan, Plano, TX (US);
Pushpa Mahalingam, Richardson, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 1/47 (2025.01); H01L 21/265 (2006.01); H10D 62/40 (2025.01); H10D 62/834 (2025.01);
U.S. Cl.
CPC ...
H10D 1/47 (2025.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H10D 62/40 (2025.01); H10D 62/834 (2025.01);
Abstract
An integrated circuit includes a dielectric isolation structure formed at a surface of a semiconductor substrate and a polysilicon resistor body formed on the dielectric isolation structure. The polysilicon resistor body includes an N-type dopant having an N-type dopant concentration, nitrogen having a nitrogen concentration, and carbon having a carbon concentration. The sheet resistance of the resistor body is greater than 5 kΩ/square.